1 semiconductors summary bv ceo = 25v : r sat = 30m ; i c = 7a description packaged in the sot223 outline this new low saturation 25v npn transistor offers extremely low on state losses making it ideal for use in dc-dc circuits and various driving and power management functions. features ? extemely low equivalent on-resistance; r sat = 30m at 6.5a ? 7 amps continuous current ? up to 20 amps peak current ? very low saturation voltages ? excellent h fe characteristics up to 20 amps applications ? dc - dc converters ? mosfet gate drivers ? charging circuits ? power switches ? motor control device marking zxtn 2005 ZXTN2005G issue 3 - may 2006 25v npn low saturation transistor in sot223 device reel size tape width quantity per reel ZXTN2005Gta ZXTN2005Gtc 7? 13? 12mm embossed 1,000 units 4,000 units ordering information pinout top view s o t 2 2 3
ZXTN2005G semiconductors issue 3 - may 2006 2 parameter symbol value unit junction to ambient (a) r ja 42 c/w junction to ambient (b) r ja 78 c/w notes (a) for a device surface mounted on 52mm x 52mm x 1.6mm fr4 pcb with high coverage of single sided 2oz copper, in still air con ditions. (b) for a device surface mounted on 25mm x 25mm x 1.6mm fr4 pcb with high coverage of single sided 1oz copper, in still air con ditions. thermal resistance parameter symbol limit unit collector-base voltage bv cbo 60 v collector-emitter voltage bv ceo 25 v emitter-base voltage bv ebo 7v continuous collector current i c 7a peak pulse current i cm 20 a power dissipation at t a =25c (a) linear derating factor p d 3.0 24 w mw/c power dissipation at t a =25c (b) linear derating factor p d 1.6 12.8 w mw/c operating and storage temperature range t j ,t stg -55 to +150 c absolute maximum ratings
ZXTN2005G semiconductors issue 3 - may 2006 3 characteristics
ZXTN2005G semiconductors issue 3 - may 2006 4 parameter symbol min. typ. max. unit c onditions collector-base breakdown voltage bv cbo 60 120 v i c =100 a collector-emitter breakdown voltage bv cer 60 120 v i c =1 a, rb 1k collector-emitter breakdown voltage bv ceo 25 35 v i c =10ma* emitter-base breakdown voltage bv ebo 78.1 vi e =100 a collector cut-off current i cbo 50 0.5 na a v cb =50v v cb =50v, t amb =100 c collector cut-off current i cer r 1k 100 0.5 na a v cb =50v v cb =50v, t amb =100 c emitter cut-off current i ebo 10 na v eb =6v collector-emitter saturation voltage v ce(sat) 28 35 55 115 195 40 50 75 140 230 mv mv mv mv mv i c =500ma, i b =10ma* i c =1a, i b =100ma* i c =1a, i b =10ma* i c =2a, i b =10ma* i c =6.5a, i b =150ma* base-emitter saturation voltage v be(sat) 980 1080 mv i c =6.5a, i b =150ma* base-emitter turn-on voltage v be(on) 890 980 mv i c =6.5a, v ce =1v* static forward current transfer ratio h fe 300 300 200 40 400 450 275 55 i c =10ma, v ce =1v* i c =1a, v ce =1v* i c =7a, v ce =1v* i c =20a, v ce =1v* transition frequency f t 150 i c =100ma, v ce =10v f=50mhz output capacitance c obo 48 pf v cb =10v, f=1mhz* switching times t on t off 33 464 ns i c =1a, v cc =10v, i b1 =-i b2 =100ma electrical characteristics (at t amb = 25c unless otherwise stated) * measured under pulsed conditions. pulse width 300 s; duty cycle 2%.
ZXTN2005G semiconductors issue 3 - may 2006 5 typical characteristics
ZXTN2005G semiconductors 6 issue 3 - may 2006 europe zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road, kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com corporate headquarters zetex semiconductors plc zetex technology park chadderton, oldham, ol9 9ll united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex semiconductors plc 2005 package outline controlling dimensions are in millimeters. approximate conversions are given in inches pad layout details dim millimeters inches dim millimeters inches min max min max min max min max a - 1.80 - 0.071 e 2.30 bsc 0.0905 bsc a1 0.02 0.10 0.0008 0.004 e1 4.60 bsc 0.181 bsc b 0.66 0.84 0.026 0.033 e 6.70 7.30 0.264 0.287 b2 2.90 3.10 0.114 0.122 e1 3.30 3.70 0.130 0.146 c 0.23 0.33 0.009 0.013 l 0.90 - 0.355 - d 6.30 6.70 0.248 0.264 - ---- package dimensions
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